The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
Jun. 04, 2018
Abb Schweiz Ag, Baden, CH;
Holger Bartolf, Brugg, CH;
Munaf Rahimo, Gänsbrunnen, CH;
Lars Knoll, Wohlenschwil, CH;
Andrei Mihaila, Baden, CH;
Renato Minamisawa, Windisch, CH;
ABB Schweiz AG, Baden, CH;
Abstract
A method of manufacturing a semiconductor device is provided with: (a) providing a wide bandgap substrate product, (b) forming source regions by applying a first mask with a first and second mask layer and applying an n dopant, forming a well layer by removing such part of the first mask, which is arranged between the two source regions, and applying a p dopant, forming two channel regions by forming a third mask by performing an etching step, by which the first mask layer is farther removed at the openings than the second mask layer, and then removing the second mask layer, wherein the remaining first mask layer forms a third mask and applying a p dopant, wherein a well layer depth is at least as large as a channel layer depth, (c) after step (b) for forming a plug applying a fourth mask, which covers the source regions and the channel layers and applying a p fourth dopant to a greater depth than the well layer depth and with a higher doping concentration than the well layers.