The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Aug. 15, 2017
Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Narayan K, Bangalore, IN;

Sateesh Desireddi, Khammam, IN;

Aneesh Puthoor, Bangalore, IN;

Dharmaraju Marenahally Krishna, Bengaluru, IN;

Arun Thandapani, Bangalore, IN;

Divya Prasad, Bengaluru, IN;

Thendral Murugaiyan, Bangalore, IN;

Piyush Dhotre, Bengaluru, IN;

Assignee:

SanDisk Technologies LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/38 (2006.01); G11C 29/44 (2006.01); G11C 29/00 (2006.01); G11C 29/42 (2006.01); G11C 29/02 (2006.01); G11C 7/04 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G11C 29/38 (2013.01); G11C 7/04 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 29/42 (2013.01); G11C 29/44 (2013.01); G11C 29/76 (2013.01); G11C 2029/0409 (2013.01);
Abstract

Non-volatile memory and processes for reprogramming data posing a potential reliability concern are provided. A process is provided for distinguishing between cross-temperature effects and read disturb effects as part of determining whether to perform a maintenance operation such as reprogramming. A process is provided that compensates for cross-temperature effects while testing to determine whether to perform a maintenance operation. Applying temperature compensation attempts to remove cross-temperature effects so that testing accurately detects whether read disturb has occurred, without the effects of temperature. By reducing cross-temperature effects, maintenance operations can be more accurately scheduled for memory that has experienced read disturb, as opposed to cross-temperature effects.


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