The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Feb. 16, 2018
Applicant:

Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Hiroyasu Shichi, Tokyo, JP;

Keiji Watanabe, Tokyo, JP;

Daisuke Ryuzaki, Tokyo, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); H01L 21/687 (2006.01); H01J 27/02 (2006.01); H01J 37/305 (2006.01); H01J 37/30 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00341 (2013.01); B81C 1/00626 (2013.01); H01J 27/022 (2013.01); H01J 37/3005 (2013.01); H01J 37/3056 (2013.01); H01L 21/68714 (2013.01); B81C 2201/0132 (2013.01); H01J 2237/31749 (2013.01);
Abstract

A sufficient processing speed and sufficient processing accuracy are obtained in a microstructure manufacturing method using ion beams. The microstructure manufacturing method includes the steps of: (a) irradiating a first region of a sample with a first ion beam (projection ion beam) formed by being passed through a first opening portion of a first mask, and etching the sample; and (b) irradiating a second region that is wider than the first region in a direction along a beam width, with a second ion beam (projection ion beam), and processing the sample. Furthermore, a magnitude of a skirt width of a longitudinal section of the second ion beam is smaller than a magnitude of a skirt width of a longitudinal section of the first ion beam.


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