The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Oct. 27, 2017
Applicant:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Inventors:

Ravinder Reddy Rachala, Austin, TX (US);

Stephen V. Kosonocky, Ft. Collins, CO (US);

Assignee:

Advanced Micro Devices, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01K 7/01 (2006.01); H03K 3/03 (2006.01); H03B 5/04 (2006.01);
U.S. Cl.
CPC ...
H03B 5/04 (2013.01); G01K 7/01 (2013.01); H03K 3/0315 (2013.01);
Abstract

A temperature sensor has a first transistor with a gate voltage tied to maintain the first transistor in an off state with leakage current flowing through the transistor, the leakage current varying with temperature. A second transistor is coupled to the first transistor and receives a gate voltage to keep the second transistor in an on state. A current mirror mirrors the leakage current and supplies a mirrored current used to control a frequency of an oscillator signal varies with the mirrored current. The temperature of the first transistor is determined based the frequency of the oscillator signal.


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