The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Dec. 12, 2018
Applicant:

Trumpf Photonics Inc., Cranbury, NJ (US);

Inventors:

Carlo Holly, Princeton, NJ (US);

Stefan Heinemann, Hightstown, NJ (US);

Suhit Ranjan Das, West Windsor, NJ (US);

Prasanta Modak, East Windsor, NJ (US);

Assignee:

Trumpf Photonics Inc., Cranbury, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/042 (2006.01); H01S 5/06 (2006.01); H01S 5/40 (2006.01); H01S 5/20 (2006.01); H01S 5/30 (2006.01); H01S 5/323 (2006.01); H01S 5/343 (2006.01); H01S 5/327 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0424 (2013.01); H01S 5/0607 (2013.01); H01S 5/20 (2013.01); H01S 5/2059 (2013.01); H01S 5/2068 (2013.01); H01S 5/305 (2013.01); H01S 5/3077 (2013.01); H01S 5/4031 (2013.01); H01S 5/3013 (2013.01); H01S 5/3018 (2013.01); H01S 5/323 (2013.01); H01S 5/327 (2013.01); H01S 5/343 (2013.01);
Abstract

A semiconductor laser diode includes multiple layers stacked along a first direction, in which the multiple layers include: a first multiple of semiconductor layers; an optical waveguide on the first multiple of semiconductor layers, in which the optical waveguide includes a semiconductor active region for generating laser light, and in which the optical waveguide defines a resonant cavity having an optical axis; and a second multiple of semiconductor layers on the optical waveguide region, in which a resistivity profile of at least one layer of the multiple layers varies gradually between a maximum resistivity and a minimum resistivity along a second direction extending orthogonal to the first direction, in which a distance between the maximum resistivity and the minimum resistivity is greater than at least about 2 microns.


Find Patent Forward Citations

Loading…