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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10546962 B1

PDFFull Text
Date of Patent:
Jan. 28, 2020

Filed:

May. 15, 2018

Silicon photonics integration method and structure

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Solomon Assefa, Ossining, NY (US);

Tymon Barwicz, Yorktown Heights, NY (US);

William M. Green, Irvington, NY (US);

Marwan H. Khater, Astoria, NY (US);

Jessie C. Rosenberg, Mount Vernon, NY (US);

Steven M. Shank, Jericho, VT (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Steven Meyers

Andrew M. Calderon

Roberts Mlotkowski Safran Cole & Calderon, P.C.

Primary Examiner:

Niki H Nguyen

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 31/0203 (2014.01); H01L 31/0216 (2014.01); H01L 31/18 (2006.01); H01L 27/144 (2006.01); G02B 6/12 (2006.01); H01L 21/3205 (2006.01); H01L 31/0232 (2014.01); G02B 6/42 (2006.01); H01L 31/02 (2006.01); H01L 31/153 (2006.01); H01L 21/84 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0203 (2013.01); G02B 6/12004 (2013.01); G02B 6/4253 (2013.01); H01L 21/0217 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/32053 (2013.01); H01L 27/1443 (2013.01); H01L 31/02019 (2013.01); H01L 31/02161 (2013.01); H01L 31/02327 (2013.01); H01L 31/153 (2013.01); H01L 31/18 (2013.01); H01L 31/186 (2013.01); H01L 31/1808 (2013.01); H01L 31/1872 (2013.01); H01L 21/84 (2013.01); H01L 28/20 (2013.01); Y02P 70/521 (2015.11);
Abstract

Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector; thermally crystallizing the photodetector material after the forming the at least one encapsulating layer; and after the thermally crystallizing the photodetector material, forming a conformal sealing layer on the at least one encapsulating layer and over at least one device. The conformal sealing layer is configured to seal a crack in the at least one encapsulating layer. The photodetector and the at least one device are on a same substrate. The at least one device includes a complementary metal oxide semiconductor device or a passive photonics device.

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