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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10546954 B1

PDFFull Text
Date of Patent:
Jan. 28, 2020

Filed:

May. 21, 2019

Semiconductor device

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Shuhei Mitani, Kyoto, JP;

Yuki Nakano, Kyoto, JP;

Heiji Watanabe, Osaka, JP;

Takayoshi Shimura, Osaka, JP;

Takuji Hosoi, Osaka, JP;

Takashi Kirino, Osaka, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:

Kyoung Lee

Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/82 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/0223 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02236 (2013.01); H01L 21/02247 (2013.01); H01L 21/049 (2013.01); H01L 21/0445 (2013.01); H01L 21/8213 (2013.01); H01L 29/0847 (2013.01); H01L 29/1087 (2013.01); H01L 29/1608 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/42356 (2013.01); H01L 29/42368 (2013.01); H01L 29/511 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66068 (2013.01); H01L 29/78 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 21/02252 (2013.01); H01L 21/02255 (2013.01); H01L 29/086 (2013.01); H01L 29/0869 (2013.01); H01L 29/45 (2013.01);
Abstract

A semiconductor device includes a semiconductor layer of a first conductivity type. A well region that is a second conductivity type well region is formed on a surface layer portion of the semiconductor layer and has a channel region defined therein. A source region that is a first conductivity type source region is formed on a surface layer portion of the well region. A gate insulating film is formed on the semiconductor layer and has a multilayer structure. A gate electrode is opposed to the channel region of the well region where a channel is formed through the gate insulating film.

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