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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10546944 B1

PDFFull Text
Date of Patent:
Jan. 28, 2020

Filed:

Nov. 27, 2017

Semiconductor device and method of fabricating the same

Applicant:

Nuvoton Technology Corporation, Hsinchu Science Park, TW;

Inventors:

Subramanya Jayasheela Rao, Karnataka, IN;

Vinay Suresh, Bangalore, IN;

Po-An Chen, Toufen, TW;

Assignee:

NUVOTON TECHNOLOGY CORPORATION, Hsinchu Science Park, TW;

Attorney:

Muncy, Geissler, Olds & Lowe, P.C.

Primary Examiner:

Bitew A Dinke

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/04 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 21/761 (2006.01); H01L 29/10 (2006.01); H01L 21/8238 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66681 (2013.01); H01L 21/0415 (2013.01); H01L 21/761 (2013.01); H01L 27/0922 (2013.01); H01L 29/1083 (2013.01); H01L 29/7816 (2013.01); H01L 21/823892 (2013.01); H01L 29/086 (2013.01); H01L 29/0878 (2013.01); H01L 29/42368 (2013.01);
Abstract

A semiconductor device includes a substrate having a first conductive type. An epitaxial layer having a second conductive type is disposed on the substrate. A first buried layer of the second conductive type is disposed within a high side region of the substrate. A second buried layer of the second conductive type is disposed directly above the first buried layer of the second conductive type. A top surface of the first buried layer of the second conductive type and a top surface of the second buried layer of the second conductive type are apart from a top surface of the epitaxial layer by different distances. A dopant concentration of the first buried layer of the second conductive type is less than that of the second buried layer of the second conductive type.

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