The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Aug. 06, 2018
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Johji Nishio, Machida, JP;

Tatsuo Shimizu, Shinagawa, JP;

Mitsuhiro Kushibe, Setagaya, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/0243 (2013.01); H01L 21/02378 (2013.01); H01L 21/02447 (2013.01); H01L 21/02529 (2013.01); H01L 21/02639 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a first semiconductor region including first and second compounds including silicon and carbon. The first semiconductor region includes first to third regions contacting the second semiconductor region. The third region is positioned between the first and second regions. The first and second regions include a first element. The first element includes at least one selected from the group consisting of second and third elements. The second element includes at least one selected from the group consisting of Ar, Kr, Xe, and Rn. The third element includes at least one selected from the group consisting of Cl, Br, I, and At. The third region does not include the first element, or a concentration of the first element in the third region is lower than concentrations of the first element in the first and second regions.


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