The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Dec. 20, 2017
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Mineo Shimotsusa, Machida, JP;

Takeshi Ichikawa, Hachioji, JP;

Yasuhiro Sekine, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/024 (2014.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14634 (2013.01); H01L 24/05 (2013.01); H01L 27/1469 (2013.01); H01L 27/14618 (2013.01); H01L 27/14621 (2013.01); H01L 27/14687 (2013.01); H01L 31/024 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/48463 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/12043 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/351 (2013.01);
Abstract

A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the photoelectric conversion unit. The signal processing unit is situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate. A multilayer film including a plurality of insulator layers is provided between the first semiconductor substrate and the second semiconductor substrate. The thickness of the second semiconductor substrate is smaller than 500 micrometers. The thickness of the second semiconductor substrate is greater than the distance from the second semiconductor substrate and a light-receiving surface of the first semiconductor substrate.


Find Patent Forward Citations

Loading…