The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Aug. 27, 2018
Applicant:

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, CN;

Inventors:

Yingchun Fan, Shenzhen, CN;

Xiaoxing Zhang, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01); G02F 1/1335 (2006.01); G02F 1/1368 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G02F 1/1368 (2013.01); G02F 1/133512 (2013.01); G02F 1/136209 (2013.01); G02F 1/136286 (2013.01); H01L 27/1225 (2013.01); H01L 27/3262 (2013.01);
Abstract

A thin film transistor array substrate and a display panel are provided. The thin film transistor array substrate includes a substrate, a thin film transistor, a scan line, a data line and a pixel electrode. The thin film transistor includes a semiconductor member, a gate electrode, a source electrode and a drain electrode. The source electrode and the drain electrode include a first extension portion and a second extension portion, respectively. The first extension portion and the second extension portion are configured to block light that is emitted toward an electron migration channel of the thin film transistor. Thus, external light emitting toward the electron migration channel can be prevented.


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