The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Feb. 28, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Yuya Matsuda, Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/11556 (2017.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); H01L 27/11575 (2017.01); H01L 27/11573 (2017.01); H01L 27/11534 (2017.01); H01L 27/11548 (2017.01); H01L 27/11529 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01); H01L 21/823871 (2013.01); H01L 21/823885 (2013.01); H01L 27/11529 (2013.01); H01L 27/11534 (2013.01); H01L 27/11548 (2013.01);
Abstract

According to one embodiment, a method for manufacturing a semiconductor device includes forming a first metal material inside the first holes; forming a plurality of metal layers on the first region, the metal layers being stacked with an insulator interposed, the metal layers including a plurality of terrace portions arranged in a staircase configuration with a level difference; forming a second insulating layer on the first insulating layer and on the terrace portions; simultaneously forming a second hole and a plurality of third holes piercing the second insulating layer, the second hole reaching the first metal material, the third holes reaching the terrace portions; and forming a second metal material inside the second hole and inside the third holes.


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