The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2020
Filed:
Mar. 30, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Rajeev Ranjan, Hwaseong-si, KR;
Deepak Sharma, Suwon-si, KR;
Subhash Kuchanuri, Hwaseong-si, KR;
Chul Hong Park, Seongnam-si, KR;
Jae Seok Yang, Hwaseong-si, KR;
Kwan Young Chun, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
Integrated circuit devices are provided. The IC devices may include an active region extending in a first direction, first and second gate electrodes extending in a second direction, a first impurity region in the active region adjacent a first side of the first gate electrode, a second impurity region in the active region between a second side of the first gate electrode and a first side of the second gate electrode, a third impurity region in the active region adjacent a second side of the second gate electrode, a cross gate contact electrically connecting the first and second impurity regions, a first contact electrically connected to the third impurity region, a first wire electrically connected to the cross gate contact, and a second wire electrically connected to the first contact. The first and second wires may extend only in the first direction and may be on the same line.