The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2020
Filed:
May. 03, 2018
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Ranadeep Dutta, Del Mar, CA (US);
Matthew Michael Nowak, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01); H01L 27/06 (2006.01); H01L 27/092 (2006.01); H01L 21/8249 (2006.01); H01L 29/93 (2006.01); H01L 29/205 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0623 (2013.01); H01L 21/8249 (2013.01); H01L 27/092 (2013.01); H01L 29/205 (2013.01); H01L 29/7371 (2013.01); H01L 29/93 (2013.01);
Abstract
A semiconductor device comprises a complementary metal oxide semiconductor (CMOS) device and a heterojunction bipolar transistor (HBT) integrated on a single die. The CMOS device may comprise silicon. The HBT may comprise III-V materials. The semiconductor device may be employed in a radio frequency front end (RFFE) module to reduce size and parasitics of the RFFE module and to provide cost and cycle time savings.