The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Sep. 11, 2018
Applicants:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;

Inventor:

Toshiaki Dozaka, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4094 (2006.01); G11C 11/4097 (2006.01); G11C 11/4076 (2006.01); G11C 11/4093 (2006.01); G11C 11/4096 (2006.01); G11C 11/4091 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4094 (2013.01); G11C 11/4076 (2013.01); G11C 11/4091 (2013.01); G11C 11/4093 (2013.01); G11C 11/4096 (2013.01); G11C 11/4097 (2013.01);
Abstract

According to an embodiment, there is provided a semiconductor memory device comprising: a global bit line; a local bit line to which a plurality of cell transistors are connected; a switch connected to the local bit line; signal lines connected to the plurality of cell transistors; and a control circuit, wherein the control circuit selects a cell transistor to be selected by setting a potential of the signal line of the cell transistor to be selected to a first potential, changes a potential of the global bit line, changes a potential of the local bit line, and turns on the switch to connect the local bit line to the global bit line after changing the potential of the global bit line and the potential of the local bit line.


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