The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Feb. 05, 2018
Applicant:

Xiamen Tianma Micro-electronics Co., Ltd., Xiamen, CN;

Inventors:

Yanmei Li, Xiamen, CN;

Xuexin Lan, Xiamen, CN;

Huangyao Wu, Xiamen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/041 (2006.01); G09G 3/30 (2006.01); H03K 17/96 (2006.01);
U.S. Cl.
CPC ...
G06F 3/04142 (2019.05); G06F 3/0412 (2013.01); G06F 3/0414 (2013.01); G09G 3/30 (2013.01); H03K 17/96 (2013.01); H03K 2017/9606 (2013.01);
Abstract

An array substrate, a display panel and a display device are disclosed. The array substrate includes a base substrate, and a bias voltage applying circuit and a plurality of semiconductor pressure sensors both disposed at a side of the base substrate. The bias voltage applying circuit is electrically connected to a first power supply signal inputting terminal and a second power supply signal inputting terminal of the semiconductor pressure sensor via a first power supply signal line and a second power supply signal line, respectively, to supply a bias voltage to the semiconductor pressure sensor. A concentration of the dopant ions is higher when the related semiconductor pressure sensor is closer to the bias voltage applying circuit, so that an electrical resistance value of said semiconductor pressure sensor is lower.


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