The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Jun. 16, 2016
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Hiroki Inoue, Kanagawa, JP;

Yoshiyuki Kurokawa, Kanagawa, JP;

Takashi Nakagawa, Kanagawa, JP;

Fumika Akasawa, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/26 (2006.01);
U.S. Cl.
CPC ...
G05F 3/262 (2013.01); G09G 2310/0272 (2013.01);
Abstract

A circuit includes a current mirror circuit (CM circuit) including first and second transistors, a third transistor whose drain is electrically connected to a drain of the second transistor, a switch controlling the current output from the circuit, and first and second memory circuits. A reference current of the CM circuit is input to a drain of the first transistor; a current that is a copy of the reference current is output from the drain of the second transistor. When a current is output from the circuit, the reference current is not input to the CM circuit. A drain current corresponding to a voltage stored in the first memory circuit flows through the second transistor; a drain current corresponding to a voltage stored in the second memory circuit flows through the third transistor. The difference between the two drain currents corresponds to the output current of the circuit.


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