The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Feb. 08, 2019
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Hideki Yagi, Osaka, JP;

Naoko Konishi, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02B 6/132 (2006.01); H01S 5/22 (2006.01); G02B 6/13 (2006.01); G02B 6/136 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
G02B 6/12004 (2013.01); G02B 6/131 (2013.01); G02B 6/132 (2013.01); G02B 6/136 (2013.01); H01S 5/22 (2013.01); H01S 5/3434 (2013.01);
Abstract

A hybrid optical assembly includes: a photonic device having a waveguide structure including group IV semiconductor and oxide; and an optical source device including group III-V semiconductor. The source device is bonded to the photonic device. The source device and the waveguide structure are arranged in a direction of a first axis. The source device has a first semiconductor mesa including an upper core layer and a first upper cladding layer and a second semiconductor mesa including a lower core layer and a second upper cladding layer. The first and second semiconductor mesas extend in a direction of a second axis intersecting the first axis. The second semiconductor mesa has a length larger than that of the first semiconductor mesa. The lower core layer, the second upper cladding layer, and the upper core layer and the first upper cladding layer are arranged in the direction of the first axis.


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