The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Dec. 28, 2015
Applicants:

Robert Bosch Gmbh, Stuttgart, DE;

Ashwin K. Samarao, Sunnyvale, CA (US);

Gary O'brien, Palo Alto, CA (US);

Ando Feyh, Reutlingen, DE;

Inventors:

Ashwin K. Samarao, Sunnyvale, CA (US);

Gary O'Brien, Palo Alto, CA (US);

Ando Feyh, Reutlingen, DE;

Assignee:

Robert Bosch GmbH, Stuttgart, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 33/00 (2006.01); G01N 27/12 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
G01N 27/127 (2013.01); G01N 33/004 (2013.01); G01N 33/0047 (2013.01); H01L 21/0262 (2013.01); H01L 21/02565 (2013.01); H01L 21/02603 (2013.01);
Abstract

A thin film gas sensor device includes a substrate, a first pillar, a second pillar, a nanostructured thin film layer, and a first and a second electrical contact. The first and second pillars are supported by the substrate. The nanostructured thin film layer is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo a reduction in a density of the holes in the presence of a target gas, thereby increasing an electrical resistance of the nanostructured thin film layer. The first and the second electrical contacts are operably connected to the nanostructured thin film layer, such that the increase in electrical resistance can be detected.


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