The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Mar. 22, 2016
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Shinichi Oki, Chiba-Ken, JP;

Yoshinobu Mori, Ohmura, JP;

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 25/08 (2006.01); C23C 16/458 (2006.01); C30B 25/12 (2006.01); H01L 21/687 (2006.01); C23C 16/455 (2006.01); C30B 25/14 (2006.01); F24C 15/10 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 25/08 (2013.01); C23C 16/4558 (2013.01); C23C 16/4581 (2013.01); C23C 16/45565 (2013.01); C30B 25/12 (2013.01); C30B 25/14 (2013.01); F24C 15/10 (2013.01); H01L 21/68785 (2013.01); H01L 21/02532 (2013.01);
Abstract

Chamber components for an epitaxial growth apparatus are disclosed. A reaction chamber defined and formed by a ceiling plate. A reactant gas is rectified in a reactant gas supply path disposed in the side wall, so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path. Improvements to the upper side wall, susceptor and rectification plate of the epitaxial growth apparatus have resulted in improvements to the uniformity and formation speed of the epitaxial layer formed on substrates resulting in higher throughput and lower defects.


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