The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Mar. 12, 2018
Applicant:

Korea Advanced Institute of Science and Technology, Daejeon, KR;

Inventors:

Byeong-Soo Bae, Daejeon, KR;

Hwea Yoon Kim, Daejeon, KR;

Junho Jang, Daejeon, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 1/08 (2006.01); C09K 11/02 (2006.01); C08G 77/52 (2006.01); C09K 11/54 (2006.01); H01L 33/50 (2010.01); H01L 33/56 (2010.01); C09K 11/70 (2006.01); C09K 11/56 (2006.01); C09K 11/88 (2006.01); C08L 83/04 (2006.01); C08G 77/00 (2006.01); C08G 77/20 (2006.01);
U.S. Cl.
CPC ...
C09K 11/02 (2013.01); C08G 77/52 (2013.01); C08L 83/04 (2013.01); C09K 11/54 (2013.01); C09K 11/565 (2013.01); C09K 11/703 (2013.01); C09K 11/883 (2013.01); H01B 1/08 (2013.01); H01L 33/502 (2013.01); H01L 33/56 (2013.01); C08G 77/20 (2013.01); C08G 77/70 (2013.01); C08G 77/80 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0041 (2013.01);
Abstract

The present invention relates to a method for preparing a semiconductor nanocrystal siloxane composite resin composition, and a cured product using the same. In the preparation method, the semiconductor nanocrystals are added during a non-hydrolytic sol-gel condensation reaction for forming a siloxane structure so that a siloxane resin having a dense inorganic network, which includes a siloxane bond, is encapsulated and thus is dispersed in the semiconductor nanocrystals through a chemical interaction and a chemical bond, thereby preventing a reduction in inherent characteristics (quantum efficiency) of the semiconductor nanocrystals resulting from an external oxidizing environment. Accordingly, when the curing of the resin composition is carried out, a cured product, which can be applied to various applications including a semiconductor nanocrystal siloxane composite having excellent reliability, can be provided.


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