The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2020

Filed:

Mar. 08, 2019
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Kota Tokuda, Kanagawa, JP;

Takayuki Kawasumi, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/20 (2006.01); H01L 21/02 (2006.01); H01S 5/042 (2006.01); H01S 5/22 (2006.01); H01S 5/30 (2006.01); H01S 5/32 (2006.01); H01S 5/343 (2006.01); H01S 5/20 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0425 (2013.01); H01S 5/22 (2013.01); H01S 5/2214 (2013.01); H01S 5/2226 (2013.01); H01S 5/3054 (2013.01); H01S 5/3213 (2013.01); H01S 5/2009 (2013.01); H01S 5/34333 (2013.01); H01S 2304/04 (2013.01);
Abstract

A semiconductor light-emitting element includes a laminated structure which has an active layer between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a first semiconductor layer which includes at least the first conductivity-type semiconductor layer of the laminated structure, an insulation film which is formed on the first semiconductor layer and has an opening, and a second semiconductor layer which is formed on the insulation film and includes at least the second conductivity-type semiconductor layer of the laminated structure. The second semiconductor layer includes a first region facing the opening of the insulation film and a second region not facing the opening, and the second region has a portion with a higher impurity concentration than the first region.


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