The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2020

Filed:

Oct. 21, 2013
Applicant:

Georgia Tech Research Corporation, Atlanta, GA (US);

Inventors:

Baratunde Cola, Atlanta, GA (US);

Asha Sharma, Atlanta, GA (US);

Virendra Singh, Atlanta, GA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01); H01L 45/00 (2006.01); H01L 51/00 (2006.01); B82Y 10/00 (2011.01); H01L 31/0224 (2006.01); H01L 31/0216 (2014.01); H01L 31/0352 (2006.01); H01L 51/42 (2006.01); H01L 31/0392 (2006.01); H01L 31/108 (2006.01);
U.S. Cl.
CPC ...
H01L 45/00 (2013.01); B82Y 10/00 (2013.01); H01L 31/02167 (2013.01); H01L 31/022425 (2013.01); H01L 31/0392 (2013.01); H01L 31/035227 (2013.01); H01L 31/108 (2013.01); H01L 51/0048 (2013.01); H01L 51/0579 (2013.01); H01L 51/4206 (2013.01); H01L 51/0587 (2013.01); Y02E 10/549 (2013.01);
Abstract

Arrays containing carbon nanostructure-oxide-metal diodes, such as carbon nanotube (CNT)-oxide-metal diodes and methods of making and using thereof are described herein. In some embodiments, the arrays contain vertically aligned carbon nanostructures, such as multiwall carbon nanotubes (MWCNTs) coated with a conformal coating of a dielectric layer, such as a metal oxide. The tips of the carbon nano-structures are coated with a low work function metal, such as a calcium or aluminum to form a nanostructure-oxide-metal interface at the tips. The arrays can be used as rectenna at frequencies up to about 40 petahertz because of their intrinsically low capacitance. The arrays described herein produce high asymmetry and non-linearity at low turn on voltages down to 0.3 V and large current densities up to about 7,800 mA/cm2 and a rectification ratio of at least about 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, or 60.


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