The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2020

Filed:

Dec. 28, 2016
Applicant:

Nokia Technologies Oy, Espoo, FI;

Inventors:

Nadine Harris, Cambridge, GB;

Richard White, Cambridge, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/00 (2006.01); H01L 31/112 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/112 (2013.01); H01L 31/035218 (2013.01); H01L 31/035236 (2013.01);
Abstract

A composite nanoparticle () comprises an inner core () made of a transparent dielectric material, a first coating layer () made of a plasmonic material which overlays the inner core () and a second coating layer () made of a semiconductor material overlaying the first coating layer (). Incident light is absorbed by generating surface plasmons at a boundary () between the inner core () and the first coating layer () and at a boundary () between the first coating layer () and the second coating layer () in order to increase the light absorption and thus the exciton generation by the second coating layer (). The structure of composite particle () also allows for tuning of the resonance of the surface plasmons which tunes the frequency of light, or other electromagnetic radiation, that is detected. A photodetector for detecting the absorbed light comprises a channel () which is a layer of a two-dimensional material between a source electrode () and a drain electrode (), and a layer () of a plurality of composite particles (). The layer () acts as a photogate of the field effect transistor ().


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