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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10541341 B1

PDFFull Text
Date of Patent:
Jan. 21, 2020

Filed:

May. 29, 2018

Semiconductor light receiving device having a type—ii superlattice

Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventor:

Takashi Kato, Osaka, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;

Attorney:

Smith, Gambrell & Russell, LLP.

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/02 (2006.01); H01L 31/0304 (2006.01); H01L 31/10 (2006.01); H01L 31/105 (2006.01); H01L 31/0224 (2006.01); H01L 31/109 (2006.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); H01L 31/022408 (2013.01); H01L 31/0304 (2013.01); H01L 31/03042 (2013.01); H01L 31/03046 (2013.01); H01L 31/105 (2013.01); H01L 31/109 (2013.01); B82Y 20/00 (2013.01);
Abstract

A light receiving device includes a light absorbing layer. The light absorbing layer includes multiple unit structures. Each unit structure has an InAs portion, a first GaSb portion, an InSb portion, and a second GaSb portion, which are arranged in a direction of an axis. One of the group-III atomic plane and the group-V atomic plane in the first GaSb portion is bonded to another of the group-III atomic plane and the group-V atomic plane in the InAs portion. One of the group-III atomic plane and the group-V atomic plane of the InSb portion is bonded to another of the group-III atomic plane and the group-V atomic plane of the first GaSb portion. One of the group-III atomic plane and the group-V atomic plane of the second GaSb portion is bonded to another of the group-III atomic plane and the group-V atomic plane of the InSb portion.

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