The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2020

Filed:

Jul. 24, 2017
Applicant:

United States Government As Represented BY the Secretary of the Army, Adelphi, MD (US);

Inventors:

Sina Najmaei, Laurel, MD (US);

Madan Dubey, South River, NJ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/032 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0352 (2013.01); H01L 31/032 (2013.01); H01L 31/186 (2013.01);
Abstract

A method for controlling any of a responsivity, response time, and trap characteristics of a two-dimensional (2D) material on a self-assembled monolayers (SAMs) device, the method including modifying a surface of an oxide substrate, in an atomic scale, to create the 2D material, wherein the modifying the surface includes modifying a level of impurities trapped in the surface and a doping level of the surface, and forming charge carrier traps at the surface, wherein a capture rate and an emission rate of the charge carrier is influenced by an exposure to a light signal, and wherein the exposure to the light signal further changes the doping level of the surface.


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