The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2020

Filed:

Apr. 12, 2018
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Joachim Weyers, Hoehenkirchen, DE;

Franz Hirler, Isen, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 29/866 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 27/0255 (2013.01); H01L 27/0629 (2013.01); H01L 29/66734 (2013.01); H01L 29/7808 (2013.01); H01L 29/7811 (2013.01); H01L 29/866 (2013.01);
Abstract

A semiconductor device includes a trench structure extending into a semiconductor body from a first surface. The trench structure has a shield electrode, a dielectric structure and a diode structure. The diode structure is arranged at least partly between the first surface and a first part of the dielectric structure. The shield electrode is arranged between the first part of the dielectric structure and a bottom of the trench structure. The shield electrode and the semiconductor body are electrically isolated by the dielectric structure. Corresponding methods of manufacture are also described.


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