The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2020

Filed:

Oct. 14, 2016
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Sang Youl Lee, Seoul, KR;

Chung Song Kim, Seoul, KR;

Ji Hyung Moon, Seoul, KR;

Sun Woo Park, Seoul, KR;

June O Song, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1362 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); G02F 1/1368 (2006.01); H01L 21/762 (2006.01); H01L 27/32 (2006.01); H01L 29/205 (2006.01); G02F 1/1343 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); G02F 1/1368 (2013.01); G02F 1/136227 (2013.01); H01L 21/76251 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1266 (2013.01); H01L 27/3244 (2013.01); H01L 29/1066 (2013.01); H01L 29/205 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H01L 29/7781 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/78636 (2013.01); H01L 29/78687 (2013.01); G02F 2001/134372 (2013.01); G02F 2202/10 (2013.01); H01L 29/2003 (2013.01);
Abstract

A thin film transistor substrate according to an embodiment comprises: a support substrate; a bonding layer disposed on the support substrate; a thin film transistor disposed on the bonding layer, wherein the thin film transistor includes a channel layer containing a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed below the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode; and a pixel electrode disposed on the thin film transistor and electrically connected to the drain electrode of the thin film transistor. The thin film transistor substrate according to the embodiment, and a display panel and a display device including the same have an advantage of implementing high resolution and reproducing a soft moving image by providing a high carrier mobility.


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