The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2020

Filed:

Jun. 28, 2016
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Ryohei Kitao, Mie, JP;

Atsuko Sakata, Mie, JP;

Takeshi Ishizaki, Aichi, JP;

Satoshi Wakatsuki, Mie, JP;

Shinichi Nakao, Mie, JP;

Shunsuke Ochiai, Mie, JP;

Kei Watanabe, Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/11582 (2017.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 29/66833 (2013.01);
Abstract

A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.


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