The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2020
Filed:
Jul. 17, 2018
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sang-Hoon Baek, Seoul, KR;
Sun-Young Park, Hwaseong-si, KR;
Sang-Kyu Oh, Gwacheon-si, KR;
Ha-Young Kim, Seoul, KR;
Jung-Ho Do, Yongin-si, KR;
Moo-Gyu Bae, Incheon, KR;
Seung-Young Lee, Incheon, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method is provided. The method includes forming a first to third gate lines on a substrate, the second gate line formed between the first and third gate lines; forming a gate isolation region to cut the first to third gate lines into two first sub gate lines, two second sub gate lines and two third sub gate lines, respectively; forming a first gate contact on one of the two first sub gate lines; forming a second gate contact on the two second sub gate lines; forming a third gate contact on one of the two third sub gate lines; forming a first metal line to connect the first and third gate contacts; and forming a second metal line. The first to third gate lines extend in a first direction, and the gate isolation region extends in a second direction different from the first direction.