The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2020

Filed:

Nov. 02, 2016
Applicant:

The University of Chicago, Chicago, IL (US);

Inventors:

James Kurley, Chicago, IL (US);

Hao Zhang, Urbana, IL (US);

Dmitri V. Talapin, Riverside, IL (US);

Jake Russell, Arlington, TN (US);

Margaret Hervey Hudson, Chicago, IL (US);

Assignee:

The University of Chicago, Chicago, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); G01T 1/202 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02628 (2013.01); G01T 1/2023 (2013.01); H01L 21/0256 (2013.01); H01L 21/02554 (2013.01); H01L 21/02562 (2013.01); H01L 21/02601 (2013.01);
Abstract

Halometallate-capped semiconductor nanocrystals and methods for making the halometallate-capped semiconductor nanocrystals are provided. Also provided are methods of using solutions of the halometallate-capped semiconductor nanocrystals as precursors for semiconductor film formation. When solutions of the halometallate ligand-capped semiconductor nanocrystals are annealed, the halometallate ligands can act as grain growth promoters during the sintering of the semiconductor nanocrystals.


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