The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2020

Filed:

Apr. 23, 2018
Applicant:

Microsoft Technology Licensing, Llc, Redmond, WA (US);

Inventors:

Patrick Nelson, Redmond, WA (US);

Jackson Davis, Carnation, WA (US);

Del Myers, Seattle, WA (US);

Thomas Lai, Redmond, WA (US);

Deborah Chen, Seattle, WA (US);

Jordi Mola, Bellevue, WA (US);

Juan Carlos Arevalo Baeza, Bellevue, WA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/38 (2006.01); G11C 29/44 (2006.01);
U.S. Cl.
CPC ...
G11C 29/38 (2013.01); G11C 29/44 (2013.01);
Abstract

Described technologies extend the information available from an execution trace of a program by providing heuristically-derived values for memory contents when the trace does not include data expressly showing the value of a memory cell at a particular execution time. Various heuristics are described. The heuristics may use information about the memory cell at other times to produce the derived value. Some heuristics use other trace data, such as whether the memory cell is in a stack, whether there are gaps in the trace, or whether garbage collection or compilation occurred near the time in question. Grounds for the derived value are reported along with the derived value. A time-travel debugger or other program analysis tool can then present the derived values to users, or make other use of the derived values and grounds to assist debugging and other efforts to improve the functioning of a computing system.


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