Read bias adjustment for compensating threshold voltage shift due to lateral charge movement

Abstract

Apparatuses and techniques are provided for accurately reading memory cells by compensating for lateral charge diffusion between adjacent memory cells. A selected memory cell is read with a compensation which is based on classifying the threshold voltages of adjacent memory cells into bins. In one aspect, the compensation is based on the level of the current control gate voltage of the selected word line. In another aspect, the classifying of the threshold voltages of the adjacent memory cells can be a function of temperature. In another aspect, a memory cell can be read with compensation after a previous read operation without compensation results in an uncorrectable error. In another aspect, the classifying uses more bins for a selected edge word line.