The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2020
Filed:
Dec. 27, 2016
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Kota Tokuda, Kanagawa, JP;
Takayuki Kawasumi, Kanagawa, JP;
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09F 9/33 (2006.01); H01S 5/343 (2006.01); H01S 5/22 (2006.01); H01S 5/32 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
G09F 9/33 (2013.01); H01S 5/2227 (2013.01); H01S 5/321 (2013.01); H01S 5/343 (2013.01); H01L 33/32 (2013.01);
Abstract
A semiconductor light-emitting device according to an embodiment of the present disclosure includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer and including a plurality of well layers. In the plurality of well layers included in the active layer, a band gap inclination angle θof a second well layer located relatively close to the p-type semiconductor layer is smaller than a band gap inclination angle θof a first well layer located relatively close to the n-type semiconductor layer.