The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2020

Filed:

Feb. 22, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Luciana Meli Thompson, Albany, NY (US);

Ashim Dutta, Menands, NY (US);

Ekmini A. De Silva, Slingerlands, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2014.01); G03F 7/20 (2006.01); G03F 7/16 (2006.01); C23C 16/455 (2006.01); C23C 16/24 (2006.01); C23C 16/40 (2006.01); H01L 21/027 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01); H01J 37/28 (2006.01);
U.S. Cl.
CPC ...
G03F 7/7065 (2013.01); C23C 16/24 (2013.01); C23C 16/40 (2013.01); C23C 16/45525 (2013.01); C23C 16/45536 (2013.01); G03F 7/167 (2013.01); H01L 21/0228 (2013.01); H01L 21/0273 (2013.01); H01L 21/02274 (2013.01); H01L 22/12 (2013.01); H01J 37/28 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/02175 (2013.01); H01L 21/02181 (2013.01); H01L 21/02183 (2013.01); H01L 21/02186 (2013.01);
Abstract

Methods for post-lithographic inspection using an e-beam inspection tool of organic EUV sensitive photoresists generally includes conformal deposition of a silicon derivative or a metal oxide onto the relief image, wherein the silicon derivative is a material selected to have a dielectric constant that is greater than the dielectric constant of the underlying organic EUV sensitive photoresist. The conformal deposition of the silicon derivative or the metal oxide includes a low temperature vapor deposition process of less than about 100° C. to provide a coating thickness of less than about 5 nanometers.


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