The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2020
Filed:
Aug. 26, 2016
Applicant:
Young Chang Chemical Co., Ltd, Gyeongsangbuk-do, KR;
Inventors:
Seung Hun Lee, Daegu, KR;
Seung Hyun Lee, Daegu, KR;
Sang Woong Yoon, Seoul, KR;
Young Cheol Choi, Gumi-si, KR;
Assignee:
YOUNG CHANG CHEMICAL CO., LTD, Gyeongsangbuk-Do, KR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/038 (2006.01); G03F 7/029 (2006.01); G03F 7/027 (2006.01); G03F 7/032 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0045 (2013.01); G03F 7/027 (2013.01); G03F 7/029 (2013.01); G03F 7/032 (2013.01); G03F 7/038 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/322 (2013.01); G03F 7/38 (2013.01);
Abstract
This invention relates to an I-line negative photoresist composition having excellent etching resistance, which can exhibit superior etching resistance compared to conventional I-line negative photoresists and is thus suitable for use in semiconductor processing.
Lee, Seung. (2020). I-line negative type photoresist composition having excellent etching resistance (U.S. Patent No. 10539871). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10539871
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile