The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2020

Filed:

Aug. 23, 2018
Applicant:

Japan Display Inc., Minato-ku, JP;

Inventors:

Yohei Yamaguchi, Tokyo, JP;

Arichika Ishida, Tokyo, JP;

Hidekazu Miyake, Tokyo, JP;

Hiroto Miyake, Tokyo, JP;

Isao Suzumura, Tokyo, JP;

Assignee:

Japan Display Inc., Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1368 (2006.01); G02F 1/1362 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); G02F 1/1343 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); G02F 1/134309 (2013.01); G02F 1/136209 (2013.01); G02F 1/136227 (2013.01); H01L 27/1225 (2013.01); H01L 29/7869 (2013.01); H01L 29/78633 (2013.01); G02F 2001/13685 (2013.01); G02F 2001/136218 (2013.01); G02F 2202/10 (2013.01); H01L 29/42384 (2013.01);
Abstract

According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.


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