The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
Sep. 13, 2019
Qualcomm Incorporated, San Diego, CA (US);
Burt Lee Price, Apex, NC (US);
Dhaval Shah, Raleigh, NC (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A system is disclosed. The system includes a first stage configured to receive Vand V, the first stage including an input transistor pair, wherein the input voltage is coupled to the input transistor pair, the input transistor pair is coupled to ground, and the input transistor pair includes at a common drain a high-gain node having a voltage V. The system further include a second stage coupled to the high-gain node and configured to generate Vbased on a difference between Vand V, the second stage comprising a resistor and an inverter transistor pair, wherein the gates of the inverter transistor pair are coupled to the high-gain node of the first stage and the resistor couples the high-gain node of first stage to a common drain of the inverter transistor pair and is configured to provide and/or draw current to and/or from the high-gain node of first stage.