The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
Aug. 01, 2018
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Roberto Penzo, Vigonza, IT;
Maurizio Galvano, Padova, IT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/158 (2006.01); H02M 1/08 (2006.01); H01L 29/20 (2006.01); H03K 17/687 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H02M 1/08 (2013.01); H01L 29/2003 (2013.01); H01L 29/778 (2013.01); H02M 3/158 (2013.01); H03K 17/687 (2013.01); H03K 2217/0063 (2013.01); H03K 2217/0072 (2013.01);
Abstract
A device for switching Gallium Nitride (GaN) devices includes a high side driver, low side driver, and high side charge circuitry. The high side driver is adapted to control a high side GaN device using a high side supply. The low side driver is adapted to control a low side GaN device using a low side supply. The high side charge circuitry is adapted to charge the high side supply with the low side supply when the low side driver activates the low side GaN device.