The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
Mar. 30, 2018
Applicant:
SK Hynix Inc., Icheon, KR;
Inventors:
Hyo June Kim, Seoul, KR;
Chi Ho Kim, Yongin, KR;
Sang Hoon Cho, Gwacheon, KR;
Eung Rim Hwang, Seoul, KR;
Assignee:
SK HYNIX INC., Icheon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1233 (2013.01); H01L 27/2481 (2013.01); H01L 45/1608 (2013.01); H01L 45/06 (2013.01);
Abstract
In a method for fabricating an electronic device including a semiconductor memory, the method includes: forming stack structures, each of the stack structures including a variable resistance pattern; forming capping layers on the stack structures, the capping layers including an impurity; forming a gap fill layer between the stack structures; and removing the impurity from the capping layers and densifying the gap fill layer by irradiating the capping layers and the gap fill layer with ultraviolet light.