The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2020

Filed:

Dec. 15, 2017
Applicant:

University-industry Cooperation Group of Kyung Hee University, Gyeonggi-do, Yongin-si, KR;

Inventors:

Suk Ho Choi, Suwon-si, KR;

Chang Oh Kim, Seoul, KR;

Sung Kim, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/42 (2010.01); H01L 33/38 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/40 (2013.01); H01L 33/38 (2013.01); H01L 33/42 (2013.01); H01L 33/20 (2013.01); H01L 2933/0016 (2013.01);
Abstract

The purpose of the present invention is to provide a method for manufacturing a light-amplified optoelectronic device, on which pristine or doped graphene is transferred. Specifically, the method includes the steps of: depositing a first electrode, as a thin film, on the light emitting device; transferring pristine or doped graphene on the electrode thin film; etching the light emitting device in contact with the electrode thin film on which the transferred graphene has been transferred, thereby removing a part of the electrode thereon; spin-coating photoresist on the etched light emitting device; removing the photoresist from the spin-coated light emitting device, thereby forming an electrode thin film in a spin form and the pristine transferred to or graphene doped to the electrode thin film; and depositing metal on a second electrode.


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