The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
Dec. 03, 2015
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Jonathan P. Mailoa, Cambridge, MA (US);
Colin David Bailie, Menlo Park, CA (US);
Eric Carl Johlin, Iowa City, IA (US);
Michael David McGehee, Menlo Park, CA (US);
Tonio Buonassisi, Cambridge, MA (US);
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A 2-terminal multi-junction solar cell having a thin film of metal halide semiconductor as the top solar-cell material and crystalline silicon as the bottom solar-cell material. In the illustrative embodiment, the top solar-cell material is a perovskite of the form AM(IH), where A is a cation, preferably methylammonium (CHNH), formamidinium ([RN—CH═NR]), or cesium; M is metal, preferably Pb, Sn, Ge; H is a halide, preferably Br or Cl; and x=iodine fraction, in the range of 0 to 1, inclusive. The integration of the two solar-cell materials is enabled by the use of a tunnel junction composed of indirect band-gap material.