The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
May. 24, 2018
Boe Technology Group Co., Ltd., Beijing, CN;
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Hefei, Anhui, CN;
Lin Chen, Beijing, CN;
Haijiao Qian, Beijing, CN;
Chengshao Yang, Beijing, CN;
Mengyu Luan, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., Anhui, CN;
Abstract
The disclosure provides a thin film transistor and a fabricating method thereof, and an array substrate. The thin film transistor includes a gate, a first active layer, a second active layer, a first source, a first drain, a second source and a second drain which are provided above a base substrate. The first active layer is located at a side of the gate facing the base substrate, and the second active layer is located at a side of the gate facing away from the first active layer. The first source and the first drain are located at a side of the first active layer facing away from the gate and are connected with the first active layer. The second source and the second drain are located at a side of the second active layer facing away from the gate and are connected with the second active layer.