The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
Jan. 16, 2018
Joled Inc., Tokyo, JP;
Mitsutaka Matsumoto, Kyoto, JP;
JOLED INC., Tokyo, JP;
Abstract
A thin film transistor includes a gate electrode. The thin film transistor further includes an oxide semiconductor layer which includes at least indium and is usable as a channel layer, wherein a region of the oxide semiconductor layer closest to the gate electrode includes fluorine. The thin film transistor further includes a gate insulating layer between the gate electrode and the oxide semiconductor layer. The thin film transistor further includes a fluorine-including layer which includes fluorine and is between the gate electrode and the gate insulating layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile