The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
Aug. 31, 2018
Ubiq Semiconductor Corp., Hsinchu County, TW;
Chin-Fu Chen, Hsinchu County, TW;
uPI Semiconductor Corp., Hsinchu County, TW;
Abstract
A power semiconductor device including a substrate having an active region and a terminal region is provided. The terminal region surrounds the active region. A first epitaxial layer is disposed on the substrate in the active region and the terminal region. A second epitaxial layer is disposed on the first epitaxial layer. The second epitaxial layer includes a first termination trench, a second termination trench, and a third termination trench. The first termination trench is disposed in the terminal region and is adjacent to the active region. The second termination trench is disposed in the terminal region. The third termination trench is disposed in the terminal region. The second termination trench is located between the first termination trench and the third termination trench. The third termination trench has a third electrode electrically connected to a drain.