The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
Jan. 29, 2018
Hua Su Dian LI (Su Zhou) Co. Ltd., Jiangsu, CN;
Gangfeng Ye, Fremont, CA (US);
Other;
Abstract
A vertical JFET is provided. The JFET is mixed with lateral channel structure and p-GaN gate structure. The JFET has a N+ implant source region. In one embodiment, a JFET is provided with a drain metal deposited over a backside of an N substrate, an n-type drift layer epitaxial grown over a topside of the N substrate, a buried P-type block layer deposited over the n-type drift layer, an implanted N+ source region on side walls of the lateral channel layer, and an source metal attached to the top of the p-layer and attached to the implanted N+ source region at the side. In one embodiment, the JFET further comprises a gate layer, and wherein the gate layer is a dielectric gate structure that enables a fully enhanced channel. In another embodiment, the gate layer is a p-type GaN gate structure that enables a partially enhanced channel.