The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
Sep. 11, 2018
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Takashi Izumida, Kamakura Kanagawa, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a substrate, a semiconductor layer, a first interconnection, a second interconnection and a control electrode. The semiconductor layer includes a first channel portion and a second channel portion. The first channel portion and the second channel portion extend in a first direction crossing a front surface of the substrate. The first interconnection is connected to one end of the semiconductor layer, and extends in a second direction along the front surface of the substrate. The second interconnection is connected to the other end of the semiconductor layer. The control electrode extends along the front surface of the substrate, and extends in a third direction crossing the second direction. The control electrode includes a portion positioned between the first channel portion and the second channel portion. The control electrode is electrically insulated from the semiconductor layer.