The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2020

Filed:

Aug. 17, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Yusuke Oshiki, Kuwana, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 27/11524 (2017.01); H01L 27/11536 (2017.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/31111 (2013.01); H01L 21/32134 (2013.01); H01L 21/76805 (2013.01); H01L 21/76831 (2013.01); H01L 27/11565 (2013.01); H01L 29/40117 (2019.08);
Abstract

A semiconductor memory device according to an embodiment includes: a semiconductor substrate; an insulating film provided on the semiconductor substrate; a conductive layer group including at least two conductive layers; a stacked body provided on the conductive layer group and including a plurality of films stacked; a memory film provided in a hole, the hole penetrating the stacked body and a part of the conductive layer group; and a slit splitting the stacked body and terminating at a position deeper than a contact portion between the conductive layer group and the memory film. The conductive layer group has a band-shaped part projecting to the stacked body side at a portion of the hole, and a groove part recessed to the semiconductor substrate side at a portion under the slit.


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