The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2020

Filed:

Jul. 24, 2018
Applicant:

Rohm Co., Ltd., Kyoto-shi, Kyoto, JP;

Inventors:

Atsushi Yamaguchi, Kyoto, JP;

Junichi Kashiwagi, Kyoto, JP;

Hirokatsu Umegami, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/495 (2006.01); H01L 29/20 (2006.01); H01L 23/31 (2006.01); H01L 25/07 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 24/49 (2013.01); H01L 23/3121 (2013.01); H01L 23/49558 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 24/06 (2013.01); H01L 24/48 (2013.01); H01L 25/072 (2013.01); H01L 25/074 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 23/3107 (2013.01); H01L 23/49513 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10344 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/19043 (2013.01);
Abstract

According to a first aspect of the present disclosure, a semiconductor device is provided. The semiconductor device includes a first transistor, a second transistor, at least one source terminal, at least one gate terminal, at least one drain terminal, a source wire, a gate wire, a drain wire and a support part. The support part includes two first support-part edges and two second support-part edges. Each of the two first support-part edges is parallel to a first direction, and the two first support-part edges are spaced apart from each other in a second direction that is perpendicular to the first direction. Each of the two second support-part edges is physically connected to the two first support-part edges. The source wire, the gate wire and the drain wire cross at least one of the two second support-part edges in plan view.


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