The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2020

Filed:

Sep. 06, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventors:

Yoshiaki Osada, Kawasaki Kanagawa, JP;

Kosuke Hatsuda, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01F 10/32 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H01F 10/3254 (2013.01); H01L 27/224 (2013.01); H01L 43/02 (2013.01); H01F 10/329 (2013.01); H01F 10/3286 (2013.01); H01L 43/10 (2013.01);
Abstract

According to one embodiment, a semiconductor storage device includes: a first conductor coupled to a first end of a first cell; a second conductor which couples between a second end of the first cell and a first end of a second cell; a third conductor coupled to a second end of the second cell; a first current source being capable of coupling to the first cell via the first conductor; a second current source being capable of coupling to the second cell via the third conductor; a first sense amplifier configured to read data from the first cell based on a current flowing from the first current source to the first cell; and a second sense amplifier configured to read data from the second cell based on a current flowing from the second cell to the second current source.


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